SiGe virtual substrate HMOS transistor for analogue applications
نویسندگان
چکیده
منابع مشابه
SiGe virtual substrate HMOS transistor for analogue applications
Silicon-Germanium Heterojunction Metal-Oxide-Semiconductor Field-EffectTransistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si0.7Ge0.3 “virtual substrate”. The n-type transistors were fabricated using a standard MOS process. The channel...
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2004
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2003.08.065